Plasma passivation etching for hgcdte

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August undefined, 2024

WebJun 2, 2009 · In this study we developed processes to controllably etch CdTe, the most common passivation material used for photovoltaic-based HgCdTe devices. We created a process based on xenon gas that allows for the slow controllable CdTe etch at only 0.035 …

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WebAug 14, 2024 · Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled … WebApr 7, 2024 · Non-recessed ohmic contact resistance (Rc) on ultrathin-barrier (UTB) AlGaN(<6 nm)/GaN heterostructure was effectively reduced to a low value of 0.16 Ω·mm. The method called the ‘ohmic-before-passivation’ process was adopted to eliminate the effects of fluorine plasma etching, in which an alloyed Ti/Al/Ni/Au ohmic metal stack was … showcase chesaning michigan

Journal of Vacuum Science & Technology A: Vol 38, No 5

WebMay 3, 2001 · Dry plasma, in the form of CH4/H2 reactive ion etching, was used in a multi-functional process capacity after the mesa delineation of individual detector elements … WebFor this work, the plasma was generated by a capacitively coupled 13.56 MHz generator so the probe was excited by frequencies sufﬁciently different to avoid beating with the plasma potential, typically 9 MHz, though no frequency dependence was observed in the ranges 1–12 and 15– 20 MHz. Figure 2 shows the probe bias circuit. C p is the WebPlasma etching is a form of plasma processing used to fabricate integrated circuits.It involves a high-speed stream of glow discharge of an appropriate gas mixture being shot … showcase chicken kenmore

Investigation of organic precursors and plasma mixtures allowing ...

Plasma Passivation Etching for HgCdTe - Springer

WebMay 1, 2024 · Plasma etching stands as the main etching technique of HgCdTe nowadays for its superior uniformity over large samples and run to run stability. However, in … Webplasma processing to perform passivation etching of HgCdTe. Plasma pro-cessing promises the ability to create small vias, 2 lm or less with excellent uniformity across a … showcase channel in the usaWebMethods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed … showcase chiller gea

"WebPlasma Passivation Etching for HgCdTe - NASA/ADS Inductively coupled plasmas (ICP) are the high-density plasmas of choice for the processing of HgCdTe and related compounds. … " - Plasma passivation etching for hgcdte

Plasma passivation etching for hgcdte

HIGH ASPECT RATIO SELECTIVE LATERAL ETCH USING CYCLIC PASSIVATION …

WebJun 2, 2009 · Plasma processing promises the ability to create small vias, 2 μm or less with excellent uniformity across a wafer, good run-to-run uniformity, and good etch rate … WebDec 8, 2000 · Hydrogenation of ZnS passivation for HgCdTe. Abstract: The physical and electrical effects of exposing ZnS passivation to a H/sub 2//CH/sub 4/ reactive ion etch …

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WebApr 24, 2000 · This letter examines the effect that hydrogenation has on the quality of industry-standard ZnS passivating films. The hydrogenation is achieved by exposing the samples to a H2/CH4 plasma that is... WebMar 29, 2024 · An inductive couple plasma reactive ion etching (ICP-RIE) system followed by a citric acid-based isotropic wet etching solution of C 6 H 8 O 7:H 2 O 2:H 3 PO 4 ∶ H 2 O (5:2:1:20) was used during ...

WebA fabrication procedure using dry plasma process technology has been developed for HgCdTe photoconductive detectors. Dry plasma, in the form of CH 4 /H 2 reactive ion etching, was used in a multi-functional process capacity after the mesa delineation of individual detector elements and prior to metal contact deposition to (i) etch the … WebFeb 15, 2011 · We describe the interaction of a remotely generated H 2 or H 2 /Ar plasma (2.45 GHz, 600W) with HgCdTe, using ex-situ and in-situ ellipsometry, and atomic force microscopy. This work represents the first effort to characterize a low damage HgCdTe surface cleanup process which is compatible with vacuum in-situ passivation.

WebMay 1, 2024 · The plasma-free ultra-low temperature grown ALD ZnS film has good electrical properties and is compatible with the HgCdTe process. It is a good choice for the passivation of p -type HgCdTe devices. The performance of ULT-ALD ZnS passivated HgCdTe photovoltaic devices requires us to carry out further related research. WebSep 1, 2024 · Most of the HgCdTe infrared detectors are fabricated by mesa geometry using a wet chemical or plasma etching techniques. The mesa definition etch process induces undesirable changes in HgCdTe surface properties. In narrow bandgap materials these surface changes could deteriorate a device performance.

WebAug 14, 2024 · Our interest in introducing oxygen and/or nitrogen atoms in CH 4 /H 2 /Ar plasma mixtures by means of organic precursors in the place of CH 4 or by partly substituting O 2 or N 2 O for H 2 and thereby controlling carbon deposition and surface passivation when etching HgCdTe under low substrate bias conditions is investigated in …

WebJun 13, 2014 · Fast etch rates obtained for InN were attributed to the high volatility of the InI 3 etch products as compared to the GaI 3 and AlI 3 etch products which can form passivation layers on the surface. Maximum selectivities of ~100:1 for InN:AlN and ~7.5 for InN:GaN were reported in the BBr 3 /Ar plasma. showcase chicken akron ohioWebMay 25, 2024 · The etch rates of HgCdTe were examined to be similar at different temperatures and the smoothness of the etched surface improves at cryogenic … showcase chickenWebScienceDirect.com Science, health and medical journals, full text ... showcase chimney \u0026 brick home repairWebJul 15, 2009 · Mercury cadmium telluride (MCT) CH {sub 4}-H {sub 2} based chemistry inductively coupled plasma (ICP) etching mechanisms are investigated. The effect of Ar and N {sub 2} addition in the mixture on plasma and MCT surface characteristics are studied by Langmuir probe, mass spectrometry, and x-ray photoelectron spectroscopy (XPS). showcase chicken menuWebApr 14, 2024 · The Bosch process, with SF 6 as the etching gas and C 4 F 8 as the passivation gas used alternately in the reactor chamber, cycles the etching and passivation steps for deep silicon etching [34,35,36,37]. During the passivation cycle, C 4 F 8 is ionized by ICP power and deposited on all exposed surfaces forming a fluorocarbon polymer to … showcase chillerWebEtch selectivity during plasma-assisted etching of SiO 2 and SiN x: Transitioning from reactive ion etching to atomic layer etching. Ryan J. Gasvoda, Zhonghao Zhang, ... Investigation of organic precursors and plasma mixtures allowing control of carbon passivation when etching HgCdTe in hydrocarbon-based inductively coupled plasmas. showcase chilliwackWebMay 14, 2007 · Inductively coupled plasma (ICP) chemistry based on a mixture of CH 4, Ar, and H 2 was investigated for the purpose of delineating HgCdTe mesa structures and vias typically used in the fabrication of second and third generation infrared photo detector arrays. We report on ICP etching uniformity results and correlate them with plasma … showcase chinese culture